Optimization of ion‐implanted low noise GaAs metal‐semiconductor field effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334045
Reference8 articles.
1. Super low-noise GaAs MESFET's with a deep-recess structure
2. Low-noise GaAs FET's prepared by ion implantation
3. Silicon implanted super low-noise GaAs MESFET
4. Low noise GaAs metal‐semiconductor field‐effect transistor made by ion implantation
5. High performance ion-implanted low noise GaAs MESFET's
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 0.3- mu m advanced SAINT FET's having asymmetric n/sup +/-layers for ultra-high-frequency GaAs MMIC's;IEEE Transactions on Electron Devices;1988-01
2. State-of-the-Art Ion-Implanted Low-Noise GaAs MESFET's and High-Performance Monolithic Amplifiers;IEEE Transactions on Microwave Theory and Techniques;1987-12
3. Correlation of undoped, in-alloyed, and whole-ingot annealed semi-insulating GaAs substrates for low-noise microwave amplifiers;IEEE Transactions on Electron Devices;1987-08
4. Whole-ingot annealed semi-insulating GaAs substrates for low-noise microwave amplifiers;IEEE Electron Device Letters;1987-06
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