Ultrahigh frequency operation of ion‐implanted GaAs metal‐semiconductor field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94681
Reference10 articles.
1. Super low-noise GaAs MESFET's with a deep-recess structure
2. Low‐noise GaAs field‐effect transistor made by molecular beam epitaxy
3. Quarter micron low noise GaAs FET's
4. High performance ion-implanted low noise GaAs MESFET's
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1. Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al2O3/Y2O3 as a gate dielectric;Japanese Journal of Applied Physics;2022-02-10
2. V-band monolithic low-noise amplifiers using ion-implanted n/sup +/-self-aligned GaAs MESFETs;IEEE Microwave and Guided Wave Letters;1999-04
3. Temperature dependent study of the microwave performance of 0.25-μm gate GaAs MESFETs and GaAs pseudomorphic HEMTs;IEEE Transactions on Electron Devices;1996-06
4. Noise and gain comparison of 0.25 μm gate MESFETs and PHEMTs for low power wireless communication circuits;Solid-State Electronics;1996-04
5. On the speed and noise performance of direct ion-implanted GaAs MESFETs;IEEE Transactions on Electron Devices;1993
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