A Locally Active Device Model Based on a Minimal 2T1R Circuit
Author:
Affiliation:
1. Technische Universität Dresden,Chair of Fundamentals of Electrical Engineering,Dresden,Germany
2. Western Digital San Jose Research Center,San Jose,CA,95119
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9970762/9970770/09970873.pdf?arnumber=9970873
Reference19 articles.
1. Pattern Formation in an M-CNN Structure Utilizing a Locally Active NbOx Memristor
2. Pattern formation dynamics in a Memristor Cellular Nonlinear Network structure with a numerically stable VO2 memristor model
3. On Local Activity and Edge of Chaos in a NaMLab Memristor
4. Forming-free Mott-oxide threshold selector nanodevice showing s-type NDR with high endurance (> 1012 cycles), excellent Vth stability (5%), fast (< 10 ns) switching, and promising scaling properties
5. Bipolar - JFET - MOSFET negative resistance devices
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2. DC Characterization of Numerically Efficient and Stable Locally Active Device Models;2023 12th International Conference on Modern Circuits and Systems Technologies (MOCAST);2023-06-28
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