Forming-free Mott-oxide threshold selector nanodevice showing s-type NDR with high endurance (> 1012 cycles), excellent V<inf>th</inf> stability (5%), fast (< 10 ns) switching, and promising scaling properties-Reference-Cited by-同舟云学术

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Forming-free Mott-oxide threshold selector nanodevice showing s-type NDR with high endurance (> 1012 cycles), excellent Vth stability (5%), fast (< 10 ns) switching, and promising scaling properties

Published:2018-12 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Electron Devices Meeting (IEDM)
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Author:

Hennen T.,Bedau D.,Rupp J. A. J.,Funck C.,Menzel S.,Grobis M.,Waser R.,Wouters D. J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8601505/8614478/08614618.pdf?arnumber=8614618

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Nanoelectronics Using Metal–Insulator Transition;Advanced Materials;2023-11-30

4. Volatile threshold switching memristor: An emerging enabler in the AIoT era;Journal of Semiconductors;2023-05-01

5. Hybrid CMOS-PCM Ternary Logic for Digital Circuit Applications;IEEE Transactions on Nanotechnology;2023

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