DC Characterization of Numerically Efficient and Stable Locally Active Device Models
Author:
Affiliation:
1. Technical University of Dresden (TUD),Chair of Fundamentals of Electrical Engineering,Dresden,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10176331/10176367/10176722.pdf?arnumber=10176722
Reference27 articles.
1. Edge of Chaos Theory Resolves Smale Paradox
2. Universal Dynamics Analysis of Locally-Active Memristors and Its Applications
3. Mathematical Investigation of Static Pattern Formation with a Locally Active Memristor Model
4. Edge of Chaos Is Sine Qua Non for Turing Instability
5. Deterministic mechanisms of spiking in diffusive memristors
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2. Fatigue of NbO x -Based Locally Active Memristors—Part II: Mechanisms and Modeling;IEEE Transactions on Electron Devices;2023-12
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