Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG devices-Reference-Cited by-同舟云学术

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Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG devices

Published:2014-06 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
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Author:

Bury Erik,Degraeve Robin,Cho Moon Ju,Kaczer Ben,Goes Wolfgang,Grasser Tibor,Horiguchi Naoto,Groeseneken Guido

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6870522/6898118/06898196.pdf?arnumber=6898196

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physics-informed machine learning to analyze oxide defect-induced RTN in gate leakage current;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Analysis of TDDB lifetime projection in low thermal budget HfO₂/SiO₂ stacks for sequential 3D integrations;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

3. Investigation of random telegraph noise characteristics of Hf-based MONOS nonvolatile memory devices with HfO₂ and HfON tunneling layers;Japanese Journal of Applied Physics;2022-03-02

4. Data-Driven Modeling of Low Frequency Noise Using Capture-Emission Energy Maps;Applied Sciences;2020-12-31

5. Separation of electron and hole trapping components of PBTI in SiON nMOS transistors;Microelectronics Reliability;2020-11

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