Separation of electron and hole trapping components of PBTI in SiON nMOS transistors

Author:

Waltl Michael,Stampfer Bernhard,Rzepa Gerhard,Kaczer Ben,Grasser Tibor

Funder

Austrian Research Promotion Agency

FP7

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG devices;Bury,2014

2. On-the-fly characterization of NBTI in ultra–thin gate oxide pMOSFET's;Denais,2004

3. The time dependent defect spectroscopy for the characterization of border traps in metal-oxide-semiconductor transistors;Grasser;Phys. Rev. B,2010

4. MOSFET 1/f noise measurement under switched bias conditions;van der Wel;IEEE Electron Device Lett.,2000

5. Ultra-low noise defect probing instrument for defect spectroscopy of MOS transistors;Waltl;IEEE Trans. Dev. Mat. Rel.,2020

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