Temperature investigation of a Novel 3nm TF-Bulk FinFET for Improved Performance
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/9168529/9183394/09183594.pdf?arnumber=9183594
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature Analysis of a Novel 5nm Stacked Oxide Top Bottom Gated Junctionless FinFET for improved switching and efficiency;2022 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS);2022-02-19
2. Investigation of a novel 5nm top bottom gated junctionless FinFET for improved switching and analog performance;Journal of Physics: Conference Series;2021-05-01
3. Analysis of a Novel Nanoscale Vacuum Channel TF-FinFET;Silicon;2021-04-22
4. Effects of Temperature and Supply Voltage on Soft Errors for 7-nm Bulk FinFET Technology;2021 IEEE International Reliability Physics Symposium (IRPS);2021-03
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