Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz
Author:
Affiliation:
1. GlobalFoundries,Essex Junction,VT,USA,05452
2. GlobalFoundries,Bangalore,KA,India,560045
3. GlobalFoundries,Hopewell Junction,NY,USA,12533
4. GlobalFoundries,Malta,NY,12020
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10051690/10051691/10051761.pdf?arnumber=10051761
Reference12 articles.
1. A 70–80-GHz SiGe Amplifier With Peak Output Power of 27.3 dBm
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3. Analog/mmWave Circuit Demonstrations in State-of-the-Art SiGe BiCMOS Process for 5G and Optical Transceivers;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
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