Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with f<sub>T</sub>/f<sub>max</sub> of 340/410 GHz-Reference-Cited by-同舟云学术

Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with f_T/f_max of 340/410 GHz

Published:2022-10-16 Issue: Volume: Page:
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Container-title:2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Raghunathan U. S.¹,Sirohi S.¹,Ruparelia V.²,Sharma P. K.²,Ioannou D. P.³,Jain V.⁴,Kakara H. K.²,Gedela S.²,Vanukuru V.²,Dongmo P.¹,Luce C.¹,Hazbun R.¹,Krishnasamy R.¹,Hwang J.¹,Levy M.¹,Welch K.¹,Liu S.¹,Cucci B.¹,Cole S.¹,Kantarovsky J.¹,Vallett A.¹,McCallum-Cook I.¹,Yu M.¹,Phelps R.¹,Divergilio A.¹,Sturm A.¹,Peters M.¹,Johnson S.¹,Rassel R.¹,Lagerquist M.¹,Kerbaugh M.¹,Newton K.¹,Pekarik J.¹,Liu Q.¹

Affiliation:

1. GlobalFoundries,Essex Junction,VT,USA,05452

2. GlobalFoundries,Bangalore,KA,India,560045

3. GlobalFoundries,Hopewell Junction,NY,USA,12533

4. GlobalFoundries,Malta,NY,12020

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10051690/10051691/10051761.pdf?arnumber=10051761

Reference12 articles.

1. A 70–80-GHz SiGe Amplifier With Peak Output Power of 27.3 dBm

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