Challenges and Potential of N-polar GaN HEMT for beyond 5G Wireless Network
Author:
Affiliation:
1. Transmission Devices Laboratory,Sumitomo Electric Industries, Ltd.,Kanagawa,Japan,244-8588
Funder
Technology Development
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10051690/10051691/10051701.pdf?arnumber=10051701
Reference10 articles.
1. Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H-SiC
2. Advanced Scaling of Enhancement Mode High-K Gallium Nitride-on-300mm-Si(111) Transistor and 3D Layer Transfer GaN-Silicon Finfet CMOS Integration
3. Growth and polarity control of GaN and AlN on carbon-face SiC by metalorganic vapor phase epitaxy
4. Improved X-Band Performance and Reliability of a GaN HEMT With Sunken Source Connected Field Plate Design
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1. HEMT As a Potential Contender For 5th Generation Communication Technology;2024 International Conference on Integrated Circuits, Communication, and Computing Systems (ICIC3S);2024-06-08
2. High Frequency Devices for Next Generation High-Capacity and High Speed Communication Systems;The Journal of The Institute of Electrical Engineers of Japan;2024-06-01
3. Research and Development of Compound Semiconductor Materials and Devices for Wireless Communication;The Journal of The Institute of Electrical Engineers of Japan;2024-06-01
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