A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration-Reference-Cited by-同舟云学术

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A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration

Published:2020-12-12 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Electron Devices Meeting (IEDM)
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Author:

Li R.,Stuyck N. I. Dumoulin,Kubicek S.,Jussot J.,Chan B. T.,Mohiyaddin F. A.,Elsayed A.,Shehata M.,Simion G.,Godfrin C.,Canvel Y.,Ivanov Ts.,Goux L.,Govoreanu B.,Radu I. P.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9371868/9371888/09371956.pdf?arnumber=9371956

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low charge noise quantum dots with industrial CMOS manufacturing;npj Quantum Information;2024-07-19

2. Investigation of long channel bulk MOSFETs threshold voltage model down to 10 mK and key analog parameters at 4 K;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-05

3. Probing single electrons across 300-mm spin qubit wafers;Nature;2024-05-01

4. Pipeline quantum processor architecture for silicon spin qubits;npj Quantum Information;2024-03-12

5. Non-symmetric Pauli spin blockade in a silicon double quantum dot;npj Quantum Information;2024-03-06

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