New Mobility Model for Accurate Modeling of Transconductance in FDSOI MOSFETs-Reference-Cited by-同舟云学术

New Mobility Model for Accurate Modeling of Transconductance in FDSOI MOSFETs

Published:2018-02 Issue:2 Volume:65 Page:463-469
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lin Yen-Kai^ORCID,Kushwaha Pragya^ORCID,Duarte Juan Pablo^ORCID,Chang Huan-Lin,Agarwal Harshit^ORCID,Khandelwal Sourabh,Sachid Angada B.^ORCID,Harter Michael^ORCID,Watts Josef^ORCID,Chauhan Yogesh Singh^ORCID,Salahuddin Sayeef,Hu Chenming

Funder

Semiconductor Research Corporation

Berkeley Device Modeling Center, University of California at Berkeley, Berkeley, CA 94720 USA.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8263417/08245878.pdf?arnumber=8245878

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