Channel Current Model With Real Device Effects in BSIM-IMG
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Publisher
Elsevier
Reference9 articles.
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2. BSIM-IMG: a compact model for ultrathin-body SOI MOSFETs with back-gate control;Khandelwal;IEEE Trans. Electron Devices,2012
3. New mobility model for accurate modeling of transconductance in FDSOI MOSFETs,”;Lin;IEEE Trans. Electron Devices,2018
4. Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors;Ferain;Nature,2011
5. Y.K. Choi, et al., 30 nm ultra-thin-body SOI MOSFET with selectively deposited Ge raised S/D. in: 58th DRC. Device Research Conference. Conference Digest (Cat. No. 00TH8526). IEEE, 2000.
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