PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/8232422/08114336.pdf?arnumber=8114336
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1. Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation;Applied Physics Letters;2024-04-22
2. Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
3. A Self-Consistent Approach Based on Bayesian Deconvolution for Trapping Time Constant Analysis: A Demonstration to Analyze ΔV TH Transients in p-GaN Gate Power HEMTs;IEEE Transactions on Electron Devices;2024-03
4. Stability of GaN HEMT Device Under Static and Dynamic Gate Stress;IEEE Journal of the Electron Devices Society;2024
5. GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current;Lecture Notes in Electrical Engineering;2023-11-29
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