GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current
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Publisher
Springer Nature Switzerland
Link
https://link.springer.com/content/pdf/10.1007/978-3-031-48711-8_35
Reference14 articles.
1. Tallarico, A.N., et al.: Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs. IEEE Electron Device Lett. 38(1), 99–102 (2016)
2. Moens, P., Stockman, A.: A physical-statistical approach to AlGaN/GaN HEMT reliability. In: 2019 IEEE International Reliability Physics Symposium (IRPS), pp. 1–6. IEEE (2019)
3. Millesimo, M., et al.: High-temperature time-dependent gate breakdown of p-GaN HEMTs. IEEE Trans. Electron Devices 68(11), 5701–5706 (2021)
4. Stoffels, S., et al.: Failure mode for p-GaN gates under forward gate stress with varying mg concentration. In: 2017 IEEE International Reliability Physics Symposium (IRPS), pp. 4B–4. IEEE (2017)
5. Bakeroot, B., Stoffels, S., Posthuma, N., Wellekens, D., Decoutere, S.: Trading off between threshold voltage and subthreshold slope in AlGaN/GaN HEMTs with a p-GaN gate. In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD). pp. 419–422. IEEE (2019)
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