Hot-Carrier Degradation in SiGe HBTs: A Physical and Versatile Aging Compact Model

Author:

Mukherjee ChhandakORCID,Jacquet Thomas,Fischer Gerhard G.ORCID,Zimmer Thomas,Maneux Cristell

Funder

European Commission through the Seventh Framework Program for Research

H2020 ECSEL Project Taranto

French State, managed by the ANR in the frame of the “Investments for the future” Program IdEx Bordeaux, Cluster of excellence CPU

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. n-MOS Transistor Impact Ionization Boosted by Cumulative Stress Degradation in a 250-nm SiGe BiCMOS Technology;IEEE Journal of the Electron Devices Society;2023

2. Characterization, Analysis and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications;IEEE Transactions on Device and Materials Reliability;2023

3. Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16

4. n-MOS transistor impact ionization boosted by cumulative stress degradation in a 250 nm SiGe BiCMOS technology;2022 IEEE Latin American Electron Devices Conference (LAEDC);2022-07-04

5. Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance;2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2021-12-05

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