n-MOS Transistor Impact Ionization Boosted by Cumulative Stress Degradation in a 250-nm SiGe BiCMOS Technology-Reference-Cited by-同舟云学术

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n-MOS Transistor Impact Ionization Boosted by Cumulative Stress Degradation in a 250-nm SiGe BiCMOS Technology

Published:2023 Issue: Volume:11 Page:681-686
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Gutiérrez-D. Edmundo A.¹^ORCID,Otero C. Alan Y.¹^ORCID,Xiomara Ribero F.¹^ORCID

Affiliation:

1. Department of Electronics, Instituto Nacional de Astrofísica, Óptica y Electrónica, Puebla, Mexico

Funder

Mexico National Council for Science and Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/10049274/10097852.pdf?arnumber=10097852

Reference12 articles.

1. High-performance SiGe HBTs for next generation BiCMOS technology

2. An Embedded 200 GHz Power Amplifier with 9.4 dBm Saturated Power and 19.5 dB Gain in 65 nm CMOS

3. A laser source driver in 0.18 μm SiGe BiCMOS technology for high speed quantum key distribution

4. SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems

5. Hot-Carrier Degradation in SiGe HBTs: A Physical and Versatile Aging Compact Model

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