Enhanced UV Photodetector Response of ZnO/Si With AlN Buffer Layer-Reference-Cited by-同舟云学术

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Enhanced UV Photodetector Response of ZnO/Si With AlN Buffer Layer

Published:2017-10 Issue:10 Volume:64 Page:4161-4166
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Roul Basanta^ORCID,Pant Rohit,Chirakkara Saraswathi,Chandan Greeshma,Nanda K. K.,Krupanidhi S. B.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8038917/08022872.pdf?arnumber=8022872

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ZnO-Based Flexible UV Photodetector for Wearable Electronic Applications;IEEE Sensors Journal;2023-11-01

2. Self-powered ultraviolet photodetector with very short and balanced response/recovery time based on ZnO/Si heterojunction with complex interface structure;Materials Chemistry and Physics;2023-07

3. Investigation of ZnO/Graphene/Si Based UV Photodetectors for Civil and Military Applications;2023 International Conference on Communication, Circuits, and Systems (IC3S);2023-05-26

4. Effect of thermal annealing on ZnO/AlN/GaN/AlN heterostructure grown on Si substrate by radio frequency sputtering;Applied Physics A;2023-04-21

5. Reduced-graphene oxide decorated γ-In₂Se₃/Si heterostructure-based broadband photodetectors with enhanced figures-of-merit;Materials Advances;2023

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