Reduced-graphene oxide decorated γ-In<sub>2</sub>Se<sub>3</sub>/Si heterostructure-based broadband photodetectors with enhanced figures-of-merit-Reference-Cited by-同舟云学术

Reduced-graphene oxide decorated γ-In₂Se₃/Si heterostructure-based broadband photodetectors with enhanced figures-of-merit

Published:2023 Issue:2 Volume:4 Page:596-606
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Roul Basanta¹²^ORCID,Chowdhury Arun Malla¹³^ORCID,Kumari Malti¹,Kumawat Kishan Lal¹^ORCID,Das Sujit¹,Nanda K. K.¹⁴⁵,Krupanidhi S. B.¹

Affiliation:

1. Materials Research Centre, Indian Institute of Science, Bangalore 560012, India

2. Central Research Laboratory, Bharat Electronics, Bangalore 560013, India

3. Syamsundar College, University of Burdwan, East Bardhaman, West Bengal 713424, India

4. Institute of Physics, Bhubaneswar, Odisha 751005, India

5. Homi Bhabha National Institute, Mumbai, Maharashtra 400094, India

Abstract

Recently, two-dimensional (2D) semiconductor-based broadband photodetectors have gained tremendous attention due to their immense potential applications in high-performance optoelectronic devices.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Chemistry (miscellaneous)

Link

http://pubs.rsc.org/en/content/articlepdf/2023/MA/D2MA00918H

Reference53 articles.

1. 2D Material Optoelectronics for Information Functional Device Applications: Status and Challenges

2. 2D semiconducting materials for electronic and optoelectronic applications: potential and challenge

3. Temperature-Dependent Electrical Transport and Optoelectronic Properties of SnS2/p-Si Heterojunction

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