Effect of thermal annealing on ZnO/AlN/GaN/AlN heterostructure grown on Si substrate by radio frequency sputtering
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
https://link.springer.com/content/pdf/10.1007/s00339-023-06635-9.pdf
Reference21 articles.
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3. J. Zhou, X. Tao, J. Luo, Y. Li, H. Jin, S. Dong, Y. Fu, Nebulization using ZnO/Si surface acoustic wave devices with focused interdigitated transducers. Surf. Coat. Technol. 367, 127–134 (2019)
4. M.A. Badruddin, M.S. Shaifudin, A.M.I.A.A. Mohd, W.M.I.W.M. Kamaruzzaman, N.A.M. Nasir, N. Yusof, M.S.M. Ghazali, Electrical and microstructural evaluation of ZnO varistor ceramics with different CaSiO3 contents. Mater. Chem. Phys. 289, 126464 (2022)
5. B. Roul, R. Pant, S. Chirakkara, G. Chandan, K.K. Nanda, S.B. Krupanidhi, Enhanced UV photodetector response of ZnO/Si with AlN buffer layer. IEEE Trans. Electron. Dev. 64, 4161–4166 (2017)
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