A 23.9 µW 13.6-bit Period Modulation-Based Capacitance-to-Digital Converter with Dynamic Current Mirror Front-end Achieving Capacitor Range of 1 to 68 pF
Author:
Affiliation:
1. Yonsei University,Seoul,Korea
2. Sungkyunkwan University,Suwon,Korea
3. LX Semicon,Seoul,Korea
4. University of Pittsburgh,PA,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10347557/10347908/10347985.pdf?arnumber=10347985
Reference6 articles.
1. 27.6 A 0.7pF-to-10nF fully digital capacitance-to-digital converter using iterative delay-chain discharge
2. A 114-AF RMS- Resolution 46-NF/10-MΩ -Range Digital-Intensive Reconfigurable RC-to-Digital Converter with Parasitic-Insensitive Femto-Farad Baseline Sensing
3. Temperature Compensation in CMOS Peaking Current References
4. 27.7 A 0.05mm2 1V capacitance-to-digital converter based on period modulation
5. 5.2 Capacitance-to-Digital Converter for Operation Under Uncertain Harvested Voltage down to 0.3V with No Trimming, Reference and Voltage Regulation
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