Evidence of Supercoupling Effect in Ultrathin Silicon Layers Using a Four-Gate MOSFET-Reference-Cited by-同舟云学术

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Evidence of Supercoupling Effect in Ultrathin Silicon Layers Using a Four-Gate MOSFET

Published:2017-02 Issue:2 Volume:38 Page:157-159
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Cristoloveanu S.,Athanasiou S.^ORCID,Bawedin M.,Galy Ph.

Funder

REMINDER and WayToGoFast European Projects

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7833214/07778147.pdf?arnumber=7778147

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2. Feedback Field-Effect Transistors/Zero Subthreshold Swing and Zero Impact Ionization FET;Springer Tracts in Electrical and Electronics Engineering;2024

3. The SOI Transistor;75th Anniversary of the Transistor;2023-07-03

4. The floating body effect of a WSe₂ transistor with volatile memory performance;Materials Horizons;2022

5. A Review of Sharp-Switching Band-Modulation Devices;Micromachines;2021-12-11

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