The floating body effect of a WSe<sub>2</sub> transistor with volatile memory performance-Reference-Cited by-同舟云学术

The floating body effect of a WSe₂ transistor with volatile memory performance

Published:2022 Issue:7 Volume:9 Page:1878-1887
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Wang Zhan-Peng¹,Xie Peng²,Mao Jing-Yu³,Wang Ruopeng⁴,Yang Jia-Qin⁴,Feng Zihao¹,Zhou Ye¹^ORCID,Kuo Chi-Ching⁵^ORCID,Han Su-Ting⁴^ORCID

Affiliation:

1. Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China

2. Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China

3. Department of Physics, National University of Singapore, Singapore, 117542, Singapore

4. College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China

5. Institute of Organic and Polymeric Materials, Research and Development Center of Smart Textile Technology, National Taipei University of Technology, Taipei 10608, Taiwan

Abstract

The innovative exploration of the floating body effect in a 2D WSe2 dual-gate transistor for the potential implementation of single-transistor capacitor-less dynamic random access memory.

Funder

National Natural Science Foundation of China

Guangdong Science and Technology Department

National Taipei University of Technology

Shenzhen Science and Technology Innovation Commission

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/MH/D2MH00151A

Reference55 articles.