SiGe and Si Gate-All-Around FET Fabricated by Selective Etching the Same Epitaxial Layers-Reference-Cited by-同舟云学术

SiGe and Si Gate-All-Around FET Fabricated by Selective Etching the Same Epitaxial Layers

Published:2022-03-06 Issue: Volume: Page:
ISSN:
Container-title:2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
language:
Short-container-title:

Author:

Chang Wei-Yuan¹,Luo Guang-Li¹,Huang Yi-Shuo²,Chu Chun-Lin¹,Lee Yao-Jen¹,Chen Bo-Yuan¹,Lin Chun-Hsiung²,Wu Wen-Fa¹,Yeh Wen-Kuan¹

Affiliation:

1. Taiwan Semiconductor Research Institute,NARL,Hsinchu,Taiwan

2. National Yang Ming Chiao Tung University,International College of Semiconductor Technology,Hsinchu,Taiwan

Funder

Ministry of Science and Technology

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9797886/9797892/09797991.pdf?arnumber=9797991

Reference11 articles.

1. Low Ge Content Ultra-Thin Fin Width (5nm) Monocrystalline SiGe n-Type FinFET With Low Off State Leakage and High ION/IOFF Ratio

2. Top-down fabrication and electrical characterization of Si and SiGe nanowires for advanced CMOS technologies

3. First Demonstration of 4-Stacked Ge0.915 Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoped Channels;huang;IEEE Symposium on VLSI Technology,2020

4. A Novel Dry Selective Etch of SiGe for the Enablement of High Performance Logic Stacked Gate-All-Around NanoSheet Devices

5. Stacked Ge Nanosheet GAAFETs Fabrication and Strain Effects Measurement

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Si Multi-Bridge Channel CMOS Inverter with Five Stacked Layers Fabricated from Epitaxial Si_0.8Ge_0.2/Si Multilayers;2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA);2024-04-22

2. Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM;Journal of Semiconductors;2023-12-01

3. Si Interlayers Trimming Strategy in Gate-All-Around Device Architecture for Si and SiGe Dual-Channel CMOS Integration;IEEE Transactions on Electron Devices;2023-12