Si Multi-Bridge Channel CMOS Inverter with Five Stacked Layers Fabricated from Epitaxial Si<sub>0.8</sub>Ge<sub>0.2</sub>/Si Multilayers-Reference-Cited by-同舟云学术

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Si Multi-Bridge Channel CMOS Inverter with Five Stacked Layers Fabricated from Epitaxial Si_0.8Ge_0.2/Si Multilayers

Published:2024-04-22 Issue: Volume: Page:1-2
ISSN:
Container-title:2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)
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Author:

Chang Wei-Yuan¹,Luo Guang-Li¹,Chu Chun-Lin¹,Chen Shih-Hong¹,Hsueh Fu-Kuo¹,Chen Bo-Yuan¹,Lee Yao-Jen²,Wu Wen-Fa¹

Affiliation:

1. Taiwan Semiconductor Research Institute, NARL,Hsinchu,Taiwan

2. Advanced Semiconductor Institute, National Yang Ming Chiao Tung University,Hsinchu,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10546337/10546338/10546459.pdf?arnumber=10546459

Reference4 articles.

1. Tunability of Parasitic Channel in Gate-All-Around Stacked Nanosheets

2. Role of critical thickness in SiGe/Si/SiGe heterostructure design for qubits

3. SiGe and Si Gate-All-Around FET Fabricated by Selective Etching the Same Epitaxial Layers

4. Investigation on selectively etched SiGe and Si surface for Gate-All-Around CMOS devices fabrication

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