Realization of Monolithic SiC Power IC Utilizing the Compatible Process for CMOS and Power MOSFET
Author:
Affiliation:
1. Advanced Industrial Science and Technology,Ibaraki,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9797886/9797892/09798360.pdf?arnumber=9798360
Reference7 articles.
1. Monolithic Integration of Lateral HV Power MOSFET with LV CMOS for SiC Power IC Technology
2. 1200 V 4H-SiC DMOSFET with an Integrated Gate Buffer
3. 1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold Voltage
4. First Demonstration of a Monolithic SiC Power IC Integrating a Vertical MOSFET with a CMOS Gate Buffer
5. Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-Well
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. SiCパワーICを実現;The Journal of The Institute of Electrical Engineers of Japan;2023-10-01
2. A SiC 3D Power IC Directly Integrating a Power MOSFET With Its CMOS Gate Driver Using Flip Chip Bonding;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28
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