Monolithic Integration of Lateral HV Power MOSFET with LV CMOS for SiC Power IC Technology-Reference-Cited by-同舟云学术

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Monolithic Integration of Lateral HV Power MOSFET with LV CMOS for SiC Power IC Technology

Published:2021-05-30 Issue: Volume: Page:
ISSN:
Container-title:2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Isukapati Sundar Babu,Zhang Hua,Liu Tianshi,Ashik Emran,Lee Bongmook,Morgan Adam J,Sung Woongje,Fayed Ayman,Agarwal Anant K.

Funder

Advanced Research Projects Agency

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9452126/9452187/09452235.pdf?arnumber=9452235

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Mobility 4H-SiC P-MOSFET via Ultrathin ALD B2O3 Interlayer between SiC and SiO2;Solid State Phenomena;2024-08-22

2. A review of silicon carbide CMOS technology for harsh environments;Materials Science in Semiconductor Processing;2024-08

3. High-Mobility 4H-SiC p-Channel MOSFETs on Nonpolar Faces;IEEE Electron Device Letters;2024-07

4. A 400 V Buck Converter integrated with Gate-Drivers and low-voltage Controller in a 25–600 V mixed-mode SiC CMOS technology;Analog Integrated Circuits and Signal Processing;2024-04-23

5. SiC-on-insulator based lateral power device and it’ s analytical models;Results in Physics;2024-03

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