SiCパワーICを実現
Author:
Affiliation:
1. (国研)産業技術総合研究所
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering
Link
https://www.jstage.jst.go.jp/article/ieejjournal/143/10/143_648/_pdf
Reference10 articles.
1. (1) X. She, A. Q. Huang, Ó. Lucía, and B. Ozpineci : “Review of Silicon Carbide Power Devices and Their Applications”, IEEE Transactions on Industrial Electronics, Vol.64, No.10, pp.8193-8205 (2017)
2. (2) H. A. Mantooth, T. Evans, C. Farnell, Q. Le, and R. Murphree : “Emerging trends in silicon carbide power electronics design”, CPSS Transactions on Power Electronics and Applications, Vol.2, No.3, pp.161-169 (2017)
3. (3) A. Yao, M. Okamoto, F. Kato, H. Hozoji, S. Sato, S. Harada, and H. Sato : “High-speed switching operation for a SiC CMOS and power module”, IEICE Electronics Express, Vol.18, No.14, pp.20210234 (2021)
4. (4) M. Okamoto, M. Iijima, T. Nagano, K. Fukuda, and H. Okumura : “Controlling characteristics of 4H-SiC (0001) p-channel MOSFETs fabricated on ion-implanted n-well”, Mater. Sci. Forum, Vols. 717-720, pp.781-784 (2012)
5. (5) M. Okamoto, A. Yao, H. Sato, and S. Harada : “First demonstration of a monolithic SiC power IC integrating a vertical MOSFET with a CMOS gate buffer”, Proc. of the 33rd ISPSD, Nagoya, pp.71-74 (2021)
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