Impact of Stack Structure Control and Ferroelectric Material Optimization in Novel Laminate HSO and HZO MFMIS FeFET-Reference-Cited by-同舟云学术

Impact of Stack Structure Control and Ferroelectric Material Optimization in Novel Laminate HSO and HZO MFMIS FeFET

Published:2022-04-18 Issue: Volume: Page:
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Container-title:2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
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Author:

Ali T.¹,Mertens K.¹,Olivo R.¹,Lehninger D.¹,Lederer M.¹,Muller F.¹,Rudolph M.¹,Oehler S.¹,Kuhnel K.¹,Hoffmann R.¹,Schramm P.¹,Czernohorsky M.¹,Kampfe T.¹,Seidel K.¹

Affiliation:

1. Fraunhofer Institute for Photonic Microsystems (IPMS),Center Nanoelectronic Technologies (CNT),Dresden,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9770952/9770961/09771003.pdf?arnumber=9771003

Reference5 articles.

1. High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

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1. Unlocking large memory windows and 16-level data per cell memory operations in hafnia-based ferroelectric transistors;Science Advances;2024-06-07

2. Design Guidelines of Hafnia Ferroelectrics and Gate-Stack for Multilevel-Cell FeFET;IEEE Transactions on Electron Devices;2024-03

3. Multilevel Operation of Ferroelectric FET Memory Arrays Considering Current Percolation Paths Impacting Switching Behavior;IEEE Electron Device Letters;2023-05

4. BEOL-Compatible MFMIS Ferroelectric/Anti-Ferroelectric FETs—Part I: Experimental Results With Boosted Memory Window;IEEE Transactions on Electron Devices;2023

5. On the strong coupling of polarization and charge trapping in HfO2/Si-based ferroelectric field-effect transistors: overview of device operation and reliability;Applied Physics A;2022-11-28