Infrared Thermal Imaging-Based Power MOSFET Thermal Resistance Test Method Research-Reference-Cited by-同舟云学术

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Infrared Thermal Imaging-Based Power MOSFET Thermal Resistance Test Method Research

Published:2023-10-12 Issue: Volume: Page:1-6
ISSN:
Container-title:2023 Global Reliability and Prognostics and Health Management Conference (PHM-Hangzhou)
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Author:

Shao Hongming¹,Zhang Sujuan¹,Wan Bo¹,Wang Ye¹,Long Mengxiang¹

Affiliation:

1. School of Reliability and Systems Engineering, Beihang University,Beijing,China

Funder

Academic Excellence Foundation of BUAA for PhD Students

Science and Technology on Reliability and Environmental-Engineering Laboratory

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10482420/10482375/10482662.pdf?arnumber=10482662

Reference11 articles.

1. Study on the Method to Measure the Junction-to-Case Thermal Resistance of Press-Pack IGBTs

2. Temperature distribution and thermal resistance analysis of high-power laser diode arrays

3. Temperature Influence on the Accuracy of the Transient Dual Interface Method for the Junction-to-Case Thermal Resistance Measurement

4. Transient thermal analysis as measurement method for IC package structural integrity

5. An experimental method for improving temperature measurement accuracy of infrared thermal imager

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