Incorporating Process Variations Into SRAM Electromigration Reliability Assessment Using Atomic Flux Divergence-Reference-Cited by-同舟云学术

Incorporating Process Variations Into SRAM Electromigration Reliability Assessment Using Atomic Flux Divergence

Published:2015 Issue: Volume: Page:1-13
ISSN:1063-8210
Container-title:IEEE Transactions on Very Large Scale Integration (VLSI) Systems
language:
Short-container-title:IEEE Trans. VLSI Syst.

Author:

Guan Zhong,Marek-Sadowska Malgorzata

Funder

Division of Computing and Communication Foundations through the National Science Foundation

Microelectronics Advanced Research Corporation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Software

Link

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