A Novel Approach to Suppress the Inhomogeneous Reverse Recovery Behavior of the Body Diode in Superjunction MOSFET
Author:
Affiliation:
1. China Resources Microelectronics (Chongqing) Limited,Chongqing,China,401331
2. Chongqing University,Chongqing Engineering Laboratory of High-Performance Integrated Circuits,Chongqing,China,400044
Funder
National Natural Science Foundation of China
Chongqing Research Program of Basic Research and Frontier Technology
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9962815/9963138/09963356.pdf?arnumber=9963356
Reference8 articles.
1. A Multiepi Superjunction MOSFET With a Lightly Doped MOS-Channel Diode for Improving Reverse Recovery
2. A Low-Reverse-Recovery-Charge Superjunction MOSFET With P-Base and N-Pillar Schottky Contacts
3. Superjunction MOSFET With Dual Built-In Schottky Diodes for Fast Reverse Recovery: A Numerical Simulation Study
4. A Low Reverse Recovery Charge Superjunction MOSFET With an Integrated Tunneling Diode
5. SJ-MOSFET with wave-type field limiting ring for high di/dt robustness of body diode reverse recovery
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1. Superjunction MOSFET with an N-Dot Region in the P-Pillar for Soft Reverse Recovery;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
2. Ruggedness of Silicon Power MOSFETs–Part II: Device Design Failures and Modeling: A Review;IEEE Transactions on Electron Devices;2024-06
3. Investigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions;Energies;2024-05-30
4. Improving the Reverse-Recovery Performance of Si SJ-MOSFETs With a Low-Voltage GaN HEMT in a Cascode Configuration;IEEE Transactions on Power Electronics;2024-05
5. An UMOSFET integrated with graded semi-super-junction and 3C/4H–SiC hetero-crystalline freewheeling junction;Microelectronics Journal;2023-12
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