Investigation of Linearity in the High Electric Field Region for SiGe HBTs Based on Volterra Series-Reference-Cited by-同舟云学术

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Investigation of Linearity in the High Electric Field Region for SiGe HBTs Based on Volterra Series

Published:2014-12 Issue:4 Volume:14 Page:1049-1055
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Lee Chie-In,Lin Yan-Ting,Lin Wei-Cheng

Funder

National Science Council of Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/7298/6971050/06919268.pdf?arnumber=6919268

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of temperature dependence of linearity for SiGe HBTs in the avalanche region using Volterra series;Microelectronics Reliability;2016-05

2. Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region;Active and Passive Electronic Components;2016

3. An Improved Noise Model for SiGe HBT With an Inductive Breakdown Network in the Avalanche Region;IEEE Transactions on Device and Materials Reliability;2015-12

4. An Improved Four-Port Equivalent Circuit Model of RF MOSFETs for Breakdown Operation;IEEE Transactions on Device and Materials Reliability;2015-03

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