Author:
Lee Chie-In,Lin Yan-Ting,Lin Wei-Cheng
Funder
Ministry of Science and Technology of Taiwan
National Science Council of Taiwan
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. 165-GHz transceiver in SiGe technology;Laskin;IEEE J. Solid State Circuits,2008
2. Multiphysics modeling of RF and microwave high-power transistors;Aaen;IEEE Trans. Microwave Theory Tech.,2012
3. A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: part I—ESD;Voldman;Microelectron. Reliab.,2005
4. RF characteristics of proton radiated large-area SiGe HBTs at extreme temperatures;Qin;Microelectron. Reliab.,2012
5. On-wafer low frequency noise measurements of SiGe HBTs: impact of technological improvements on 1/f noise;Grandchamp;Microelectron. Reliab.,2004
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献