Optimization of the Linearity of InGaAs/InAlAs SAGCM APDs-Reference-Cited by-同舟云学术

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Optimization of the Linearity of InGaAs/InAlAs SAGCM APDs

Published:2019-07-15 Issue:14 Volume:37 Page:3459-3464
ISSN:0733-8724
Container-title:Journal of Lightwave Technology
language:
Short-container-title:J. Lightwave Technol.

Author:

Jiang Yi,Chen Jun^ORCID

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/50/8744414/08716505.pdf?arnumber=8716505

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electric field controlled charge transport in an InGaAs/InP photodetector;Applied Physics A;2024-07-02

2. Enhancing Linearity of Light Response in Avalanche Photodiodes by Suppressing Electrode Size Effect;Sensors;2024-05-24

3. Edge Breakdown Suppression in Avalanche Photodiodes Using an Attached Step Guard Ring;IEEE Transactions on Electron Devices;2024-05

4. Performance Optimization of 3-gain-stage InGaAs/InAlAs Avalanche Photodetector;2024 Photonics & Electromagnetics Research Symposium (PIERS);2024-04-21

5. Illumination Induced Negative Differential Resistance in InGaAs Avalanche Photodiode;IEEE Access;2024

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