Illumination Induced Negative Differential Resistance in InGaAs Avalanche Photodiode-Reference-Cited by-同舟云学术

Illumination Induced Negative Differential Resistance in InGaAs Avalanche Photodiode

Published:2024 Issue: Volume:12 Page:50595-50604
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Khaliq Afshan¹,Zhou Xinyi¹,Chai Hong-Yu²,Ali Munir¹,Wu Hao¹,Gassab Oussama¹,Liu Hong¹^ORCID,Xiao Duo¹,Yang Xiao-Guang²,Du Sichao¹^ORCID

Affiliation:

1. Laboratory of Single-Photon Detection and Imaging Techniques, Zhejiang Engineering Research Center for Edge Intelligence Technology and Equipment, School of Information and Electrical Engineering, Hangzhou City University, Hangzhou, Zhejiang, China

2. Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China

Funder

Young Talents Plan of Zhejiang University City College

Special Project for Improving Level of Local Universities in Zhejiang Province

Scientific Research Fund for Fostering Young Teachers

Innovation Fund for High-Level Returned Overseas Scholars in Hangzhou

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/6287639/10380310/10487920.pdf?arnumber=10487920

Reference48 articles.

1. Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects