A 4.5X Noise Improved Split-Resistance Currennt mode Bandgap with 18.4ppm/°C in 28nm CMOS-Reference-Cited by-同舟云学术

A 4.5X Noise Improved Split-Resistance Currennt mode Bandgap with 18.4ppm/°C in 28nm CMOS

Published:2023-06-13 Issue: Volume: Page:
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Container-title:2023 34th Irish Signals and Systems Conference (ISSC)
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Author:

Nagulapalli R.¹,Kumar Palani Rakesh²

Affiliation:

1. Oxford Brookes University,Oxford

2. IIT-Delhi,Oxford

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10161993/10161996/10161999.pdf?arnumber=10161999

Reference23 articles.

1. CMOS Bandgap References With Self-Biased Symmetrically Matched Current–Voltage Mirror and Extension of Sub-1-V Design

2. Monolithic Photonic-Electronic Linear Direct Detection Receiver for 56Gbps OOK;kroh;ECOC 2016 42nd European Conference on Optical Communication,2016

3. A Microwatt Low Voltage Bandgap Reference for Bio-medical Applications

4. A two-stage opamp frequency Compensation technique by splitting the 2nd stage

5. A 0.82 V Supply and 23.4 ppm/°C Current Mirror Assisted Bandgap Reference

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