A 15.4 ppm/°C Improved Current Mode Bandgap with 0.9 V Supply in 28 nm CMOS-Reference-Cited by-同舟云学术

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A 15.4 ppm/°C Improved Current Mode Bandgap with 0.9 V Supply in 28 nm CMOS

Published:2024-06-08 Issue: Volume: Page:1-5
ISSN:
Container-title:2024 International Conference on Integrated Circuits, Communication, and Computing Systems (ICIC3S)
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Author:

Singh Mayank Kumar¹,Mehra Hirensh¹,Kaur Taranveer¹,Nagulapalli Rajasekhar²,Das Devarshi Mrinal¹,Sakare Mahendra¹

Affiliation:

1. Indian Institute of Technology Ropar,Dept. of Electrical Engineering,Rupnagar,Punjab,India

2. Oxford Brookes University,Dept. of Electrical Engineering,Oxford OX3,U. K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10602773/10602837/10603389.pdf?arnumber=10603389

Reference20 articles.

1. A Low Power Differential Delay Cell without Cross-Coupled Latch for Ring VCO

2. A Double Cross-Coupled Delay Cell for High-Frequency Differential Ring VCOs

3. A simple three-terminal IC bandgap reference

4. A CMOS bandgap reference circuit with sub-1-V operation

5. A 82μW Mixed-Mode sub-1V Bandgap reference with 25 ppm/°C Temperature Co-efficient with Simultaneous PTAT Generation

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