Novel Radiation Hardened Magnetic Full Adder Using Spin-Orbit Torque for Multinode Upset
Author:
Affiliation:
1. Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, India
Funder
Science and Engineering Research Board
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/5165412/9656771/09784894.pdf?arnumber=9784894
Reference21 articles.
1. Characterization of the Total Charge and Time Duration for Single-Event Transient Voltage Pulses in a 65-nm CMOS Technology
2. LEAP: Layout Design through Error-Aware Transistor Positioning for soft-error resilient sequential cell design
3. Design of Robust SRAM Cells Against Single-Event Multiple Effects for Nanometer Technologies
4. Ultra-Low Power, Highly Reliable, and Nonvolatile Hybrid MTJ/CMOS Based Full-Adder for Future VLSI Design
5. Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques
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1. An Energy Efficient In-Memory Computing Architecture Using Reconfigurable Magnetic Logic Circuits for Big Data Processing;IEEE Transactions on Magnetics;2023-12
2. Novel Radiation Hardened DSOT-MRAM Read Peripheral Circuit With Reduced Sensitive Nodes;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-11
3. Machine Learning Assisted Statistical Variation Analysis of Voltage Gated Spin Orbit Torque Magnetic Tunnel Junction;2023 IEEE Nanotechnology Materials and Devices Conference (NMDC);2023-10-22
4. Machine Learning Assisted Soft Error Variation Analysis of Radiation Hardened MRAM Circuit;2023 IEEE 23rd International Conference on Nanotechnology (NANO);2023-07-02
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