Characterization of the Total Charge and Time Duration for Single-Event Transient Voltage Pulses in a 65-nm CMOS Technology
Author:
Affiliation:
1. Department of ICLINK, imec, Leuven, Belgium
2. Department of Electrical Engineering (ESAT), KU Leuven, Geel, Belgium
Funder
European Union’s Horizon 2020 Research and Innovation Programme through the framework of RADSAGA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
http://xplorestaging.ieee.org/ielx7/23/9830888/09672104.pdf?arnumber=9672104
Reference30 articles.
1. Effect of Well and Substrate Potential Modulation on Single Event Pulse Shape in Deep Submicron CMOS
2. Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices
3. New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening
4. Single event transient pulsewidth measurements using a variable temporal latch technique
5. Heavy-ion induced SETs in 32 nm SOI inverter chains;maharrey;Proc IEEE Radiat Effects Data Workshop (REDW),2015
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