Impact of Off-Axis External Magnetic Field Perturbation on the Write Error Slopes of Perpendicular STT-RAM Cell: Micromagnetic Study
Author:
Affiliation:
1. Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx8/5165412/10421785/10602740.pdf?arnumber=10602740
Reference28 articles.
1. Quantifying External Magnetic Field Immunity of the Write Process in Perpendicular Spin-Transfer-Torque Random Access Memory
2. 2 MB Array-Level Demonstration of STT-MRAM Process and Performance Towards L4 Cache Applications
3. Demagnetization factors for elliptic cylinders
4. Size dependence of spin-torque switching in perpendicular magnetic tunnel junctions
5. Reliability and magnetic immunity of reflow-capable embedded STT-MRAM in 16 nm FinFET CMOS process;Chen
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