Affiliation:
1. Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, India
Funder
Centre for Development of Advanced Computing (CDAC), Pune, for providing highperformance computing resources
Science and Engineering Research Board, Government of India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference31 articles.
1. Reliability and magnetic immunity of reflow-capable embedded STT-MRAM in 16nm FinFET CMOS process;chen;Symp VLSI Technol Dig Tech Papers,2021
2. eNVM MRAM Retention Reliability Modeling in 22FFL FinFET Technology
3. Impact of external magnetic field on embedded perpendicular STT-MRAM technology qualified for solder reflow
4. STT-MRAM: A robust embedded non-volatile memory with superior reliability and immunity to external magnetic field and RF sources;naik;Symp VLSI Technol Dig Tech Papers,2021
5. Write error rates of in-plane spin-transfer-torque random access memory calculated from rare-event enhanced micromagnetic simulations
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