Size dependence of spin-torque switching in perpendicular magnetic tunnel junctions
Author:
Affiliation:
1. Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay, Avenue de la Vauve, 91120 Palaiseau, France
2. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Funder
IMEC's Industrial Affiliation Program on the STT-MRAM devices
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5055741
Reference33 articles.
1. A mechanism of magnetic hysteresis in heterogeneous alloys
2. A. Aharoni , Introduction to the Theory of Ferromagnetism ( Clarendon Press, 2001), p. 183.
3. Erratum: Basic principles of STT-MRAM cell operation in memory arrays
4. Nonuniform switching of the perpendicular magnetization in a spin-torque-driven magnetic nanopillar
5. Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy
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