Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs
Author:
Funder
Office of Naval Research
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/8617115/08599132.pdf?arnumber=8599132
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation on Traps Dynamics & Negative Bias Stress in D-Mode GaN-on-Si Power MIS HEMTs Under High-Temperature;IEEE Transactions on Device and Materials Reliability;2024-09
2. Trap characterization of high-growth-rate laser-assisted MOCVD GaN;Applied Physics Letters;2023-09-11
3. Performance Analysis and Optimization of Asymmetric Front and Back Pi Gates with Dual Material in Gallium Nitride High Electron Mobility Transistor for Nano Electronics Application;International Journal of Engineering;2023
4. Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer;Materials;2022-05-13
5. The observation of Gaussian distribution and origination identification of deep defects in AlGaN/GaN MIS-HEMT;Applied Physics Letters;2022-04-25
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