General Expression for Plasma Extraction Transit-Time Oscillations From Silicon-Bipolar Power Semiconductor Devices-Reference-Cited by-同舟云学术

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General Expression for Plasma Extraction Transit-Time Oscillations From Silicon-Bipolar Power Semiconductor Devices

Published:2019-02 Issue:2 Volume:66 Page:999-1005
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Saito Katsuaki^ORCID,Wada Takashi,Sasajima Yasushi^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8617115/08580561.pdf?arnumber=8580561

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Accurate Multiport Network Model for Forced Oscillations Analysis and Suppression of Multichip IGBT Power Modules;IEEE Transactions on Power Electronics;2024-01

2. Sensitivity Analysis and Suppression Method on PETT Oscillations Under Short Circuit Condition of High-Power IGBT Modules;2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS);2023-11-10

3. Analytical Modeling and Sensitivity Analysis on Plasma Extraction Transit Time (PETT) Oscillations in High-Voltage NPT p-i-n Diode;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-04

4. A review of PETT oscillation's characteristics, mechanism, and suppression methods in the IGBT device;Power Electronic Devices and Components;2023-03

5. Time-domain and Frequency-domain Analyses of PETT Oscillation in Press Pack IGBTs;CSEE Journal of Power and Energy Systems;2023

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