A review of PETT oscillation's characteristics, mechanism, and suppression methods in the IGBT device

Author:

Feng Ganyu,Li Xuebao,Tang Xinling,Wei Xiaoguang,Zhao Zhibin

Publisher

Elsevier BV

Reference36 articles.

1. Impacts of high frequency, high di/dt, dv/dt environment on sensing quality of GaN based converters and their mitigation;Liu;CPSS Transactions on Power Electronics and Applications,2018

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4. Evaluation of switching loss contributed by parasitic ringing for fast switching wide band-gap devices;Zhang;IEEE Transactions on Power Electronics,2018

5. A comprehensive review of high-frequency short-circuit oscillation modes in IGBT applications;Reigosa,2020

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