Variable Turn-OFF Gate Voltage Drive for Voltage Balancing of High-Speed SiC MOSFETs in Series-Connection
Author:
Affiliation:
1. School of Marine Electrical Engineering, Dalian Maritime University, Dalian, China
2. Durapower Technology Pte. Ltd., Singapore
3. School of Information Science and Engineering, Northeastern University, Shenyang, China
Funder
Fundamental Research Funds for the Central Universities
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9770296/09723554.pdf?arnumber=9723554
Reference38 articles.
1. Modeling and Analysis of SiC MOSFET Switching Oscillations
2. An Active Voltage Balancing Method for Series Connection of SiC MOSFETs With Coupling Inductor
3. A Modified RC Snubber With Coupled Inductor for Active Voltage Balancing of Series-Connected SiC MOSFETs
4. Active Gate Drive With Gate–Drain Discharge Compensation for Voltage Balancing in Series-Connected SiC MOSFETs
5. Modeling, Design, and Evaluation of Active $\mathrm{\text{} d }v/\mathrm{\text{} d }t$ Balancing for Series-Connected SiC MOSFETs
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3. A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
4. Advanced voltage balancing techniques for series-connected SiC-MOSFET devices: A comprehensive survey;Power Electronic Devices and Components;2024-04
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