Active Gate Drive With Gate–Drain Discharge Compensation for Voltage Balancing in Series-Connected SiC MOSFETs-Reference-Cited by-同舟云学术

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Active Gate Drive With Gate–Drain Discharge Compensation for Voltage Balancing in Series-Connected SiC MOSFETs

Published:2021-05 Issue:5 Volume:36 Page:5858-5873
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Zhou Ye¹^ORCID,Wang Xu¹,Xian Liang²^ORCID,Yang Dan³^ORCID

Affiliation:

1. School of Information Science and Engineering, Northeastern University, Shenyang, China

2. Energy Research Institute @ Nanyang Technological University, Singapore, Singapore

3. Key Laboratory of Infrared Optoelectric Materials and Micro-Nano Devices, Northeastern University, Shenyang, China

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/9337250/09200795.pdf?arnumber=9200795

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate driver, snubber and circuit design considerations for fast‐switching series‐connected SiC MOSFETs;IET Power Electronics;2024-07-05

2. A Hybrid Current- and Voltage-Source Driver for Active Driving of Series-Connected SiC MOSFETs;IEEE Transactions on Power Electronics;2024-03

3. Power Module Design with Chip-Level Series-Connected SiC MOSFETs;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

4. Magnetic-Coupled and Low-Cost Gate Driver for Series-Connected SiC MOSFETs;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-10

5. SiC Three-Level Neutral-Point-Clamped Converter With Clamping Diode Volume Reduction Using Quasi-Two-Level Operation;IEEE Transactions on Power Electronics;2023-08

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