A Fast Short-Circuit Protection Method for SiC MOSFET Based on Indirect Power Dissipation Level
Author:
Affiliation:
1. State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University, Chongqing, China
Funder
National Science Foundation of China for Distinguished Young Scholars
Key-Area Research and Development Program of Guangdong Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9770296/09740417.pdf?arnumber=9740417
Reference12 articles.
1. Short Circuit Capability and Short Circuit Induced $V_{\mathrm{TH}}$ Instability of a 1.2-kV SiC Power MOSFET
2. Driving a Silicon Carbide Power MOSFET with a fast Short Circuit Protection
3. The Two-Dimensional Short-Circuit Detection Protection For SiC MOSFETs in Urban Rail Transit Application
4. Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs
5. Power Loss Analysis in a SiC/IGBT Propulsion Inverter Including Blanking Time, MOSFET’s Reverse Conduction and the Effect of Thermal Feedback Using a PMSM Model
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