Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs-Reference-Cited by-同舟云学术

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Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs

Published:2014-10 Issue:10 Volume:61 Page:5570-5581
ISSN:0278-0046
Container-title:IEEE Transactions on Industrial Electronics
language:
Short-container-title:IEEE Trans. Ind. Electron.

Author:

Wang Zhiqiang,Shi Xiaojie,Xue Yang,Tolbert Leon M.,Wang Fei,Blalock Benjamin J.

Funder

II-VI Foundation and Oak Ridge National Laboratory under the U.S. Department of Energy's Vehicle Technologies Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

http://xplorestaging.ieee.org/ielx7/41/6809870/06701150.pdf?arnumber=6701150

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